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2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
SST12LP072.4 GHz High Gain High Power PA
Preliminary Specifications
FEATURES:
* High Gain: - Typically 29 dB gain across 2.4-2.5 GHz over temperature 0C to +85C High linear output power: - >26 dBm P1dB - Please refer to "Absolute Maximum Stress Ratings" on page 4 - Meets 802.11g OFDM ACPR requirement up to 22 dBm - ~2.5% added EVM up to 19 dBm for 54 Mbps 802.11g signal - Meets 802.11b ACPR requirement up to 22 dBm High power-added efficiency/Low operating current for both 802.11g/b applications - ~22%/220 mA @ POUT = 22 dBm for 802.11g - ~21%/230 mA @ POUT = 22 dBm for 802.11b Single-pin low IREF power-up/down control - IREF <2 mA Low idle current - ~70 mA ICQ High-speed power-up/down - Turn on/off time (10%- 90%) <100 ns - Typical power-up/down delay with driver delay included <200 ns * High temperature stability - ~1 dB gain/power variation between 0C to +85C * Low shut-down current (< 0.1 A) * Excellent On-chip power detection - <+/- 0.3dB variation between 0C to +85C - <+/- 0.4dB variation with 2:1 VSWR mismatch - <+/- 0.3dB variation Ch1 through Ch14 * 20 dB dynamic range on-chip power detection * Simple input/output matching * Packages available - 16-contact VQFN - 3mm x 3mm * All non-Pb (lead-free) devices are RoHS compliant
*
*
* * *
APPLICATIONS:
* * * * WLAN (IEEE 802.11g/b) Home RF Cordless phones 2.4 GHz ISM wireless equipment
PRODUCT DESCRIPTION
The SST12LP07 is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST12LP07 can be easily configured for high-power applications with good power-added efficiency while operating over the 2.4- 2.5 GHz frequency band. This device typically provides 29 dB gain with 22% power-added efficiency @ POUT = 22 dBm for 802.11g and 21% poweradded efficiency @ POUT = 22 dBm for 802.11b. The SST12LP07 has excellent linearity, typically ~2.5% added EVM at 19 dBm output power which is essential for 54 Mbps 802.11g/n operation while meeting 802.11g spectrum mask at 22 dBm. The SST12LP07 can also be configured for high-efficiency operation, typically 17 dBm linear 54 Mbps 802.11g output power at 85 mA total power consumption. High-efficiency operation is desirable in embedded applications such as in hand-held units. The SST12LP07 also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. Ultra-low reference current (total IREF ~2 mA) makes the SST12LP07 controlla(c)2006 Silicon Storage Technology, Inc. S71321-00-000 5/06 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice.
ble by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST12LP07 ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications. The SST12LP07 has an excellent on-chip, single-ended power detector, which features wide-range (~20 dB) with dB-wise linearization and high stability over temperature (< +/-0.3 dB 0C to +85C), frequency (<+/-0.3 dB across Channels 1 through 14), and output load (<+/-0.4 dB with 2:1 output VSWR all phases). The excellent onchip power detector provides a reliable solution to board-level power control. The SST12LP07 is offered in a 16-contact VQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions.
2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
Preliminary Specifications
FUNCTIONAL BLOCKS
VCC1
VCCb 14
16 NC RFIN NC VREF 1 2 3
15
13 12 NC 11 RFOUT 10 NC
Bias Circuit 4 5 NC 6 NC 7 NC 8 Det
1321 B1.0
VCC2
NC
9
NC
FIGURE 1: Functional Block Diagram
(c)2006 Silicon Storage Technology, Inc.
S71321-00-000
5/06
2
2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
Preliminary Specifications
PIN ASSIGNMENTS
VCC1
VCCb 14
16 NC RFIN NC VREF 1
15
13 12 NC
Top View
2 3 4 RF and DC GND 0 5 NC 6 NC 7 NC 8 Det
(contacts facing down)
VCC2 11 RFOUT 10 NC 9 NC
NC
1321 P1.0
FIGURE 2: Pin Assignments for 16-contact VQFN
PIN DESCRIPTIONS
TABLE 1: Pin Description
Symbol GND NC RFIN NC VREF NC NC NC Det NC NC RFOUT NC VCC2 VCCb NC VCC1 Pin No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 No Connection Power Supply Power Supply No Connection Power Supply PWR PWR PWR No Connection No Connection O No Connection No Connection No Connection O No Connection I Pin Name Ground No Connection I Type1 Function The center pad should be connected to RF ground with several low inductance, low resistance vias Unconnected pin RF input, DC decoupled Unconnected pin 1st and 2nd stage idle current control Unconnected pin Unconnected pin Unconnected pin On-chip power detector Unconnected pin Unconnected pin RF output Unconnected pin Power supply, 2nd stage Power supply, bias circuit Unconnected pin Power supply, 1st stage
T1.0 1321
1. I=Input, O=Output
(c)2006 Silicon Storage Technology, Inc.
S71321-00-000
5/06
3
2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
Preliminary Specifications
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figures 3 through 11 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Input power to pin 2 (PIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm Average output power (POUT)1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +26 dBm Supply Voltage at pins 13, 14, and 16 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.0V Reference voltage to pin 4 (VREF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the maximum rating of average output power could cause permanent damage to the device.
Operating Range
Range Industrial Ambient Temp -40C to +85C VCC 3.3V
TABLE 2: DC Electrical Characteristics
Symbol VCC ICC Supply Current for 802.11g, 22 dBm for 802.11b, 22 dBm ICQ IOFF VREG Idle current for 802.11g to meet EVM <2.5% @ 19 dBm Shut down current Reference Voltage for, with 110 resistor 2.75 2.85 220 230 70 0.1 2.95 mA mA mA A V
T2.0 1321
Parameter Supply Voltage at pins 13, 14, 16
Min. 3.0
Typ 3.3
Max. 3.6
Unit V
Test Conditions
(c)2006 Silicon Storage Technology, Inc.
S71321-00-000
5/06
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
Preliminary Specifications TABLE 3: AC Electrical Characteristics for Configuration
Symbol FL-U POUT Parameter Frequency range Output power @ PIN = -6 dBm 11b signals @ PIN = -7 dBm 11g signals G GVAR1 GVAR2 ACPR Added EVM 2f, 3f, 4f, 5f Small signal gain Gain variation over band (2400~2485 MHz) Gain ripple over channel (20 MHz) Meet 11b spectrum mask Meet 11g OFDM 54 Mbps spectrum mask @ 19 dBm output with 11g OFDM 54 Mbps signal Harmonics at 22 dBm, without external filters 22 22 2.5 -40 0.2 22 21 28 29 0.5 dBm dBm dB dB dB dBm dBm % dBc
T3.2 1321
Min. 2400
Typ
Max. 2485
Unit MHz
(c)2006 Silicon Storage Technology, Inc.
S71321-00-000
5/06
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
Preliminary Specifications
TYPICAL PERFORMANCE CHARACTERISTICS Test Conditions: VCC = 3.3V, TA = 25C, unless otherwise specified
S11 versus Frequency
0 -5 -10 0 -10 -20
S12 versus Frequency
S12 (dB)
-30 -40 -50 -60
S11 (dB)
-15 -20 -25 -30 0.0
-70 -80 0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Frequency (GHz)
Frequency (GHz)
S21 versus Frequency
40 30 20 0 -5 -10 -15 -20 -25 -30 0.0
S22 versus Frequency
S21 (dB)
10 0 -10 -20 -30 -40 0.0
S22 (dB)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Frequency (GHz)
Frequency (GHz)
1321 F3.0
FIGURE 3: S-Parameters
(c)2006 Silicon Storage Technology, Inc.
S71321-00-000
5/06
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
Preliminary Specifications
TYPICAL PERFORMANCE CHARACTERISTICS Test Conditions: VCC = 3.3V, TA = 25C, 54 Mbps 802.11g OFDM signal
EVM versus Output Power
10 9 8 7 Freq=2.412 GHz Freq=2.442 GHz Freq=2.484 GHz
EVM (%)
6 5 4 3 2 1 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm)
1321 F4.0
FIGURE 4: EMV versus Output Power
Power Gain versus Output Power
40 38 36 Freq=2.412 GHz Freq=2.442 GHz Freq=2.484 GHz
Power Gain (dB)
34 32 30 28 26 24 22 20 9 10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Output Power (dBm)
1321 F5.0
FIGURE 5: Power Gain versus Output Power
(c)2006 Silicon Storage Technology, Inc.
S71321-00-000
5/06
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2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
Preliminary Specifications
Supply Current versus Output Power
280 260 Freq=2.412 GHz Freq=2.442 GHz Freq=2.484 GHz
Supply Current (mA)
240 220 200 180 160 140 120 100 80 9 10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Output Power (dBm)
1321 F6.0
FIGURE 6: Total Current Consumption for 802.11g operation versus Output Power
PAE versus Output Power
30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 9 10
Freq=2.412 GHz Freq=2.442 GHz Freq=2.484 GHz
PAE (%)
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Output Power (dBm)
1321 F7.0
FIGURE 7: PAE versus Output Power
(c)2006 Silicon Storage Technology, Inc.
S71321-00-000
5/06
8
2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
Preliminary Specifications
10 Freq = 2.412 GHZ
0
-10
Freq = 2.442 GHz Freq = 2.484 GHz
Amplitude (dB)
-20 -30 -40 -50 -60 -70 2.3 5 2.4 0 2 .45 2 .50 2 .5 5
Frequency (GHz)
1321 F8.0
FIGURE 8: 802.11g Spectrum Mask at 22 dBm
Detector Voltage versus Output Power
1.7 1.6 1.5 Freq = 2.412 GHz (25C) Freq = 2.442 GHz (25C) Freq = 2.484 GHz (25C) Freq = 2.412 GHz (0C) Freq = 2.442 GHz (0C) Freq = 2.484 GHz (0C) Freq = 2.412 GHz (85C) Freq = 2.442 GHz (85C) Freq = 2.484 GHz (85C)
Detector Voltage (V)
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 1 2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm)
1321 F9.1
FIGURE 9: Detector Characteristics Over Temperature and Over Frequency
(c)2006 Silicon Storage Technology, Inc.
S71321-00-000
5/06
9
2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
Preliminary Specifications
Detector Voltage versus Output Power
1.7 1.6 1.5 Freq = 2.442 GHz (0C) Freq = 2.442 GHz (25C) Freq = 2.442 GHz (85C) Freq = 2.442 GHz (Max) Freq = 2.442 GHz (Min)
Detector Voltage (V)
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 1 2 3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm)
1321 F10.1
FIGURE 10: CH7 Detector Characteristics Over Temperature with 2:1 Output VSWR All Phases
Test Conditions: VCC = 3.3V, TA = 25C, 1 Mbps 802.11B CCK signal
10 0 -10 -20 -30 -40 -50 -60 -70 -80 2.35 2. 40 2.45 2. 50 2.55
1321 F11.0
Freq = 2.412 GHZ Freq = 2.442 GHz Freq = 2.484 GHz
Amplitude (dB)
Frequency (GHz)
FIGURE 11: 802.11B Spectrum Mask at 22 dBm
(c)2006 Silicon Storage Technology, Inc. S71321-00-000 5/06
10
2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
Preliminary Specifications
10 F VCC R2 = 50 * 0.1 F 0.1 F 0.1 F 6.8 nH
16 1
47pF RFIN 50 / 0-20 mil
15
14
13 12
50 / 60-70 mil 47 pF RFOUT 2.0 pF
2
1.5 nH
11 10 Bias Circuit 9 5 6 7 8
Det 10 pF
3
R1 = 110 VREG 22 pF
4
Suggested operation conditions: 1. VCC = 3.3V 2. Center slug to RF ground 3. VREG = 2.85V with R1=110 * Suggested for robustness under input overdrive condition when working with some transceivers.
1321 Schematic 1.1
FIGURE 12: Typical Schematic for High-Power/High-Efficiency 802.11b/g Applications
(c)2006 Silicon Storage Technology, Inc.
S71321-00-000
5/06
11
2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
Preliminary Specifications
PRODUCT ORDERING INFORMATION
SST12LP SSTXXLP 07 XX - QVC - XXX E X Environmental Attribute E1 = non-Pb contact (lead) finish Package Modifier C = 16 contact Package Type QV = VQFN Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 2 = 2.4 GHz Product Line 1 = SST Communications
1. Environmental suffix "E" denotes non-Pb solder. SST non-Pb solder devices are "RoHS Compliant".
Valid combinations for SST12LP07 SST12LP07-QVCE SST12LP07 Evaluation Kits SST12LP07-QVCE-K
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations.
(c)2006 Silicon Storage Technology, Inc.
S71321-00-000
5/06
12
2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
Preliminary Specifications
PACKAGING DIAGRAMS
TOP VIEW
SIDE VIEW
0.2
BOTTOM VIEW
See notes 2 and 3 Pin #1 1.7
Pin #1
3.00 0.075
1.7 0.075 0.5 BSC
3.00 0.075
0.05 Max 1.00 0.80 0.30 0.18
0.45 0.35
1mm
Note: 1. Complies with JEDEC JEP95 MO-220J, variant VEED-4 except external paddle nominal dimensions. 2. From the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min).
16-vqfn-3x3-QVC-2.0
FIGURE 13: 16-contact Very-thin Quad Flat No-lead (VQFN) SST Package Code: QVC TABLE 4: Revision History
Revision 00 Description Date May 2006
*
Initial release of data sheet
(c)2006 Silicon Storage Technology, Inc.
S71321-00-000
5/06
13
2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
Preliminary Specifications
CONTACT INFORMATION Marketing
SST Communications Corp. 5340 Alla Road, Ste. 210 Los Angeles, CA 90066 Tel: 310-577-3600 Fax: 310-577-3605
Sales and Marketing Offices
NORTH AMERICA Silicon Storage Technology, Inc. Les Crowder Technical Sales Support - North America Tel: 949-495-6437 Fax: 949-495-6364 E-mail: lcrowder@sst.com ASIA PACIFIC NORTH SST Macao H. H. Chang Senior Director, Sales Room N, 6th Floor, Macao Finance Center, No. 202A-246, Rua de Pequim, Macau Tel: (853) 706-022 Fax: (853) 706-023 E-mail: hchang@sst.com ASIA PACIFIC SOUTH SST Communications Co. Sunny Tzeng Country Manager 16F-6, No. 75, Sec.1, Sintai 5th Rd Sijhih City, Taipei County 22101, Taiwan, R.O.C. Tel: +886-2-8698-1168 Fax: +886-2-8698-1169 E-mail: stzeng@sst.com KOREA SST Korea Charlie Shin Country Manager Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong, Bundang-Gu, Sungnam, Kyunggi-Do Korea, 463-020 Tel: (82) 31-715-9138 Fax: (82) 31-715-9137 Email: cshin@sst.com
EUROPE Silicon Storage Technology Ltd. Ralph Thomson Director, Field Applications Engineering Mark House 9-11 Queens Road Hersham KT12 5LU UK Tel: +44 (0) 1869 321 431 Cell: +44 (0) 7787 508 919 E-mail: rthomson@sst.com JAPAN SST Japan Kiyomi Akaba Country Manager 9F Toshin-Tameike Bldg, 1-1-14 Akasaka, Minato-ku, Tokyo, Japan 107-0052 Tel: (81) 3-5575-5515 Fax: (81) 3-5575-5516 Email: kakaba@sst.com
Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com
(c)2006 Silicon Storage Technology, Inc. S71321-00-000 5/06
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